This paper presents two new intelligent methods to linearize the Multi-Carrier Power Amplifiers (MCPA). One of the them is based on the Neuro-Fuzzy controller while the other uses two small neural networks as a polar predistorter. Neuro-Fuzzy controllers are not model based, and hence, have ability to control the nonlinear systems with undetermined parameters. Both methods are adaptive, low complex, and can be implemented in base-band part of the communication systems. The performance of the linearizers is obtained via simulation. The simulation is performed for three different scenarios; namely, a multi-carrier amplifier for GSM with four channels, a CDMA amplifier and a multi-carrier amplifier with two tones. The simulation results show that Neuro-Fuzzy Controller (NFC) and Neural Network Polar Predistorter (NNPP) have higher efficiencies so that reduce IMD3 by more than 42 and 32 dB, respectively. The practical implementation aspects of these methods are also discussed in this paper.

In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.

This paper describes the performance improvement of power amplifiers by defected ground structure (DGS). Due to the excellent capability of harmonic rejection and tuning, DGS plays a great role in improving the major nonlinear behaviors of power amplifier such as output power, harmonics, power added efficiency (PAE), and the ratio between the carrier and the third order intermodulation distortion (C/IMD3). In order to verify the improvement of performances by DGS, measured data for a power amplifier, which adopts a 30 Watts LDMOS device for the operation at 2.1-2.2 GHz, are illustrated under several operating bias currents for two cases, i.e., with and without DGS attached. The principle of the improvement is described by the simple Volterra nonlinear transfer functions with the consideration of different operating classes. The obtained improvement of the 30 Watts power amplifier, under 400 mA of IdsQ as an example, includes the reduction in the second and third harmonics by 17 dB and 20 dB, and the increase in output power, PAE, and C/IMD3 by 1.3 Watts, 3.4%, and 4.7 dB, respectively.

A high efficiency feedforward power amplifier (FFPA) with a series diode linearizer for cellular base stations is presented. In order to achieve the highest overall efficiency of an FFPA, an improved pre-distortion diode linearizer has been used and the bias condition of the main amplifier has been optimized. The optimum bias condition has been derived from the overall efficiency analysis of the FFPA with a pre-distortion linearizer. From measured overall performances of the FFPA, efficiency enhancement of the series diode linearizer has been verified. The developed FFPA achieved the efficiency of 10% and output power of 45.6 dBm at 10 MHz offset Adjacent Channel leakage Power Ratio (ACPR) -50 dBc under Wide-band Code-Division Multiple-Access (W-CDMA) modulated 2 carriers signal. This design method can be also used to optimize the source and load impedances condition of the main amplifier FET.